IHW20N120R3 (H20R1203), Транзистор 1200V 40A 310W [TO-247-3]

Характеристики

IHW20N120R3 (H20R1203), Транзистор 1200V 40A 310W [TO-247-3]The IHW20N120R3 is a Reverse Conducting IGBT with monolithic body diode. The 3rd generation of reverse conducting IGBT has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behaviour allows better thermal performance and EMI behaviour resulting in lower system costs. It is suitable for rice cookers and other soft switching applications.

• Excellent performance
• Best-in-class conduction properties in VCE(sat) and Vf
• Lowest switching losses, highest efficiency
• Soft current turn-OFF waveforms for low EMI
• Lowest power dissipation
• Better thermal management
• Surge current capability
• Lower EMI filtering requirements
• Excellent quality
• Highest reliability against peak current
• Very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Easy parallel switching capability due to positive temperature coefficient in VCEsat
• Green product
• Halogen-free