Характеристики
STD10NM60ND, МОП-транзистор, N Канал, 8 А, 600 В, 0.57 Ом The STD10NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
• 100% Avalanche tested
• Low gate input resistance
• Extremely high dV/dt avalanche capabilities
Полупроводники — ДискретныеТранзисторыМОП-транзисторы