BSC670N25NSFDATMA1, МОП-транзистор, N Канал, 24 А, 250 В

Характеристики

BSC670N25NSFDATMA1, МОП-транзистор, N Канал, 24 А, 250 В The BSC670N25NSFDATMA1 from Infineon is a 250V OptiMOST™3 N-channel power-MOSFET in 8 pin TDSON package. This new OptiMOS™ Fast Diode (FD) Infineon’s latest generation power MOSFETs are optimized for body diode hard commutation, hard switching behaviour, industry’s lowest Rds(on), Q g and Qrr, highest system reliability, system cost reduction, highest efficiency and power density and easy to design products. It is a perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control for 48V to 110V systems and DC to AC inverter.

• Excellent gate charge x RDS(on) product (figure of merit)
• Very low on-resistance RDS(on)
• Ideal for high-frequency switching and synchronous rectification
• Drain source voltage VDS is 250V
• Maximum RDS(on) is 67mohm, continuous drain current ID is 24A
• Operating temperature range from -55 C to 175 C
• Power dissipation is 150W
• Maximum gate source voltage VGS is 20V

Полупроводники — ДискретныеТранзисторыМОП-транзисторы