Характеристики
IGBT, MODULE, N-CH, 1.2KV, 50A
Product Category
IGBT Modules
Manufacturer
Infineon
RoHS
Details
Product
IGBT Silicon Modules
Configuration
3-Phase
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.25 V
Continuous Collector Current at 25 C
50 A
Gate-Emitter Leakage Current
100 nA
Pd — Power Dissipation
280 W
Package Case
Econo 3
Maximum Operating Temperature
+ 150 C
Brand
Infineon Technologies
Maximum Gate Emitter Voltage
+- 20 V
Minimum Operating Temperature
— 40 C
Mounting Style
Screw
Factory Pack Quantity
10
Part # Aliases
FP50R12KT4GBOSA1
Unit Weight
10.582189 oz