IPP50R190CEXKSA1, МОП-транзистор, N Канал, 18.5 А, 500 В

Характеристики

IPP50R190CEXKSA1, МОП-транзистор, N Канал, 18.5 А, 500 В The IPP50R190CE is a CoolMOS™ CE N-channel Power MOSFET optimized platform enabling to target cost sensitive applications by still meeting highest efficiency standards. The new series provides all benefits of a fast switching super-junction MOSFET while not sacrificing ease of use and offering the best performance ratio available on the market. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. CoolMOS™ CE series combines the experience of the leading SJ MOSFET supplier with high class innovation while representing a cost appealing alternative compared to standard MOSFETs in target applications. The resulting devices provide all benefits of a fast switching SJMOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

• High body diode ruggedness
• Reduced reverse recovery charge (Qrr)
• Reduced gate charge (Qg)
• Easy control of switching behaviour
• Better light load efficiency compared to previous CoolMOS™ generations
• Outstanding quality and reliability of CoolMOS™ technology
• Extremely low losses due to very low FOM RDS (ON), Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• Halogen-free, Green device
• Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)

Полупроводники — ДискретныеТранзисторыМОП-транзисторы