Характеристики
IGBT MODULE, DUAL, 600V
Transistor Type IGBT Module
Transistor Polarity N Channel
Voltage, Vces 600V
Current Ic Continuous a Max 54A
Voltage, Vce Sat Max 2V
Case Style SEMITOP 2
Termination Type Screw
Collector-to-Emitter Breakdown Voltage 600V
Current Ic Continuous b Max 40A
Current Ic av 54A
Current, Icm Pulsed 48A
External Depth 28mm
Fixing Centres 38mm
Fixing Hole Diameter 2mm
Power, Pd 850W
SMD Marking SEMITOP2
Temperature, Current 25 C
Time, Rise 30ns
Transistors, No. of 2
Width, External 40.5mm
Voltage 600V